首页> 外文会议>Second International Symposium on Adhesion Measurement of Films and Coatings Oct 25-27, 1999 Newark, New Jersey >Relative adhesion measurement for thin film microelectronic structures. Part Ⅱ
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Relative adhesion measurement for thin film microelectronic structures. Part Ⅱ

机译:薄膜微电子结构的相对粘附力测量。第二部分

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The present discussion on the relative adhesion measurement for thin film microelectronic structures will emphasize experimental results on the two adhesion test methods compared: the peel test and the modified edge lift-off test (MELT). The data presented show that the fracture behaviour in the modified edge lift-off test can be significantly more complex than what is detected in the peel test, and further emphasizes the importance of careful locus of failure analyses. A comparison of present results with the published literature underlines the fact that it is impossibile to determine the fundamental adhesion using a practical adhesion test. This is due to the inability to account for all energy dissipating processes during the testing. The peel test, however, can result in reliable practical adhesion measurement. MELT needs more characterization and possibly modification in sample preparation before the same can be said of this new test method.
机译:当前关于薄膜微电子结构的相对粘附力测量的讨论将着重比较两种粘附力测试方法的实验结果:剥离测试和改进的边缘剥离测试(MELT)。所提供的数据表明,改进的边缘剥离测试中的断裂行为比剥离测试中的断裂行为要复杂得多,并且进一步强调了仔细进行故障分析的重要性。将目前的结果与已发表的文献进行比较,强调了这样的事实,即使用实际的粘合力测试无法确定基本的粘合力。这是由于无法在测试过程中考虑所有耗能过程。然而,剥离测试可以导致可靠的实际粘合力测量。在此新测试方法可以说之前,MELT还需要在样品制备中进行更多的表征和可能的修改。

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