College of Physics and Engineering, Qufu Normal University, Qufu, P.R. China;
rnCollege of Physics and Engineering, Qufu Normal University, Qufu, P.R. China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, P.R. China;
rnState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, P.R. China;
quantum dot; hydrogenic donor impurity; binding energy; electric field; magnetic field;
机译:具有中心施主杂质的球形量子点GaAs / Al_xGa_(1-x)As / GaAs / Al_xGa_(1-x)As中的量子跃迁的振荡器强度
机译:磁场对GaAs / Al_xGa_(1-x)量子点中浅施主杂质能级的影响
机译:GaAs / Al_xGa_(1-x)As量子环中电场的氢供体杂质结合能依赖性
机译:电磁场对GaN / Al_XGA_(1-X)N球形量子点的氢化施用效果的影响
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:电场和磁场对锌共混对称InGaN / GaN多量子点中杂质结合能的影响
机译:介电常数失配和磁场对磁场的影响 球形量子点中氢杂质的结合能