首页> 外文会议>NATO Advanced Study Institute on Plasma Treatments and Deposition of Polymers Acquafredda di Maratea, Italy May 19-June 2, 1996 >Silicon-Carbon Thin-Film Materials Produced From Organosilanes in a Remote Hydrogen Plasma Chemical Vapor Deposition
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Silicon-Carbon Thin-Film Materials Produced From Organosilanes in a Remote Hydrogen Plasma Chemical Vapor Deposition

机译:远程氢等离子体化学气相沉积法从有机硅烷生产的硅碳薄膜材料

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摘要

Among chemical vapor deposition (CVD) techniques the remtoe plasma CVD also termed as indirect or afterglow plasma CVD, is an attractive method for the fabrication of defectless, high-quality thin-flilm materials (1). This techniqeu substantially differs from a direct plasma CVD in three major aspects.
机译:在化学气相沉积(CVD)技术中,re等离子体CVD也称为间接或余辉等离子体CVD,是一种制造无缺陷,高质量的薄箔材料的有吸引力的方法(1)。该技术在三个主要方面与直接等离子体CVD有很大不同。

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