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HOT WIRE AND SPARK PYROLYSIS AS SIMPLE NEW ROUTES TO SILICON NANOPARTICLE SYNTHESIS

机译:热线和火花热解是硅纳米粒子合成的简单新路线

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摘要

Monocrystalline silicon nanoparticles with a mean diameter of between 30 and 40 nm have been synthesised by hot wire thermal catalytic and spark pyrolysis at a pressure of 40 and 80 mbar respectively. For the production a mixture of the precursor gases, silane and diborane or silane and phosphine were used. While hot wire pyrolysis always results in multifaceted particles, those produced by spark pyrolysis are spherical. Electrical resistance measurements of compressed powders showed that boron doped silicon powders have a much higher conductivity than those doped with phosphorus. TEM and XPS analysis reveals that the difference in electrical resistivity between boron an phosphorus doped particles can be attributed to phosphorus dopants being located at the surface of the particles where an oxide layer is also observed. In contrast, boron doped particles are far less oxidised and the dopant atoms can be found in the core of the particle. The results demonstrate that hot wire and spark pyrolysis offer a new simple route to the production of monocrystalline doped silicon nanoparticles suitable for printed electrical devices.
机译:通过热线热催化和火花热解分别在40和80 mbar的压力下合成了平均直径在30到40 nm之间的单晶硅纳米粒子。为了生产,使用前体气体,硅烷和乙硼烷或硅烷和膦的混合物。尽管热丝热解总是产生多面的颗粒,但火花热解产生的颗粒却是球形的。压缩粉末的电阻测量结果表明,掺硼的硅粉比掺磷的硅粉具有更高的电导率。 TEM和XPS分析表明,硼和磷掺杂的颗粒之间的电阻率差异可归因于磷掺杂剂位于还观察到氧化物层的颗粒表面。相反,掺杂硼的粒子被氧化的程度要低得多,并且可以在粒子的核心中发现掺杂原子。结果表明,热丝和火花热解为生产适用于印刷电子设备的单晶掺杂硅纳米粒子提供了一条新的简单途径。

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  • 会议地点 Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US)
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    National Centre for Nano-Structured Materials, CSIR, P O Box 395, Pretoria 0001, South Africa;

    Dept. of Physics, University of Cape Town, Rondebosch 7701, South Africa;

    Dept. of Physics, University of Cape Town, Rondebosch 7701, South Africa;

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