Fabrication and Characterizations of Nanorod Light Emitting Diode Arrays Using Nanosphere Lithography

摘要

In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epi-structures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the mesa area. By inserting a spacer layer in between rods, nanrod LED arrays can be realized without shorting the p-type contact to n-GaN. The electrical and optical properties of the InGaN/GaN-based nano-devices are investigated at room temperatures.