Regularization Algorithm for DOS Spectrum Deconvolution From C(V) and Q(V)Dependencies of Si Nanowire-Based MOS Structure

摘要

Based on Tikhonov's regularization approach, we developed regularization algorithm (RA) for deconvolution electron spectrum N(E) from data of capacitance - gate voltage [C(V)] and charge-gate voltage [Q(VJ] characteristics of nanowire-based FETs. Our RA solves one-dimensional ill-posed Fredholm integral equations) of the second kind employing analytical properties of Fourier integral transform. The N(E) functions for CB states deconvolved from C(V) characteristics exhibit good quantitative agreement with DOS spectrum, obtained earlier [S.-K. Chin, V. Ligatchev, IEEE Electron Device Letters, 30, 395 (2009)] by Schrodinger-Poisson simulations for FETs with cylindrical Si NW cores and radii of 10 nm at temperatures 38 K.