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Design of CMOS Based 1-bit Comparator with MTCMOS and Forced Stack Technique in 180nm Technology

机译:基于CMOS的1位比较器与180nm技术中的MTCMOS和强制堆栈技术的设计

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Leakage power and propagation delay have adverse effects on the working of CMOS(nanometer) technology-based logic circuits. The motivation behind this research work is to cut down the leakage power dissipation and propagation delay, the major influencing parameters in logic circuits. The proposed work is on one-bit comparator which uses Multi threshold technique (MTCMOS), stacking technique and gate minimising logic. The technology used is l80ηm and voltage used is 1.8V. The work is performed and analyzed in SPICE. The new circuit has improved performance in power dissipation as well as propagation delay. The modified circuit shows power dissipation of 48.12p W and delay of 330pS. Comparison with previously reported circuit shows advantage of low power and less delay.
机译:泄漏功率和传播延迟对基于CMOS(纳米)技术的逻辑电路的工作具有不利影响。这项研究工作背后的动机是为了减少漏电功率耗散和传播延迟,主要影响逻辑电路中的参数。所提出的工作是在一位比较器上使用多阈值技术(MTCMOS),堆叠技术和栅极最小化逻辑。所用技术是L80ηm,使用电压为1.8V。在香料中进行并分析该工作。新电路在功耗中具有提高性能以及传播延迟。改进的电路显示出48.12p W的功耗和延迟330ps。与先前报告的电路的比较显示出低功耗和延迟较少的优势。

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