Large-signal model of AlGaAs P-HEMT under optical illumination

摘要

As an extension of our previous works in the optical-microwave interaction field, this paper shows the result of the research on large signal dynamic behavior (Pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependent of the large signal model for a P-HEMT is determined from experimental scattering parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. Experimental results show very good agreement with the theoretical analysis.