Modelling Reliability in GaN HEMT Devices

摘要

In this paper a study of the evolution over time of four different magnitudes in GaN HEMT's will be presented. The experimental data measured at III-V Lab's, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of such as magnitudes. The accuracy of the simulations validates the proposed approach.