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Thin Film Acoustoelectric GHz SAW Amplifier Design

机译:薄膜声电GHz SAW放大器设计

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Surface acoustic wave (SAW) acoustoelectric (AE) theory and device embodiments have been demonstrated from the 1960s to the present. Technology has greatly advanced in new materials, growth and deposition, and nano films offering new opportunities for AE effects. The ability to produce a practical integrated SAW AE amplifier in filters and resonators would provide new opportunities for SAW RF filters and oscillators. In particular, the AE amplifier is one component of producing a SAW-based simultaneous transmit and receive (STAR) radio at approximately 1 GHz using spread spectrum RF filtering. This paper will present research efforts on development of a thin film AE amplifier on LiNbO3. The first part of the paper will discuss the boundaries and coupled-interactions of the many design parameters for practical AE thin film amplifiers. The second part of the paper will provide the most recent results of the AE amplifier research efforts using graphene on lithium niobate.
机译:从1960年代到现在已经证明了表面声波(SAW)声电(AE)理论和设备实施例。技术在新材料,生长和沉积以及纳米膜方面已取得了巨大进步,纳米膜为AE效应提供了新的机会。在滤波器和谐振器中生产实用的集成SAW AE放大器的能力将为SAW RF滤波器和振荡器提供新的机会。尤其是,AE放大器是使用扩频RF滤波产生大约1 GHz的基于SAW的同时发送和接收(STAR)无线电的一个组件。本文将介绍在LiNbO上开发薄膜AE放大器的研究工作。 3 。本文的第一部分将讨论实际AE薄膜放大器的许多设计参数的边界和相互作用。本文的第二部分将提供使用石墨烯在铌酸锂上进行AE放大器研究的最新成果。

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