Direct imprinting of liquid silicon

摘要

A polymeric precursor solution for semiconducting silicon named "liquid silicon" was synthesized. The liquid silicon could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaboran, respectively, in the solution. Liquid silicon was spin-coated on substrates and was imprinted to obtaine fine patterns. Then the liquid silicon patterns were converted to amorphous or polycrystalline silicon at 400-700°C or above 800°C, respectively. Although a significant volume shrinkage based on the liquid-to-solid silicon conversion was observed, the well-defined angular patterns as well as electrical properties were obtained after imprinting. The direct imprinting of liquid silicon is expected to be used as microfabrication technology in the field of solution-based silicon devices.