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Positioning of Thermal Via Regions for Reducing Hotspot Temperature in 3D ICs

机译:降低3D IC中热点温度的散热通孔位置

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3D stacking of integrated circuits seems to be a main trend for increasing the processor performance. However, It results in power density increase inducing additional thermal issues that have to be overcome. In this paper we analyze the thermal behaviour of eight-core processor based on Intel Haswell architecture implemented as a 2D chip and as a 3D architecture with two layers. We implement special via regions in 3D structure in various configurations and we compare results to that obtained for 2D structure. We show that the peak temperature can be significantly reduced and locations of via regions notably affects temperature distribution inside the chip.
机译:集成电路的3D堆叠似乎是提高处理器性能的主要趋势。但是,这会导致功率密度增加,从而导致必须解决的其他散热问题。在本文中,我们分析了基于Intel Haswell架构的八核处理器的热行为,该架构实现为2D芯片和具有两层的3D架构。我们以各种配置在3D结构中实现特殊的过孔区域,并将结果与​​从2D结构获得的结果进行比较。我们显示峰值温度可以显着降低,通孔区域的位置会显着影响芯片内部的温度分布。

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