Characteristic Fluctuation of Gate-All-Around Silicon Nanowire MOSFETs Induced by Random Discrete Dopants from Source/Drain Extensions

摘要

In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.