Estudio basado en Algoritmos Genéticos de celdas solares expuestas a radiación

摘要

The electrical parameters degradation of n-type GaAs solar cells exposed to radiation from high-energy particles has been analyzed by means of computer simulation. Specifically, the radiation damage caused by electron upon the diffusion and recombination currents and the series resistance of the solar cells with different base carrier concentrations have been researched using the NRL method, the PC1D program and a home-made numerical code based on genetic algorithms. Results obtained are useful to predict the behavior of these devices under extreme operating conditions.