The essential features of power pulsed IMPATT oscillators includevariation of diode junction temperature within the pulse width andoperation with high pulse bias current density and, as a consequence,the approach of the avalanche resonant diode frequency to theoscillator's operating frequency. These features lead to considerablechange in diode RF impedance during the pulse width and, as result, tovariation of the output signal amplitude and phase, and thusrequirements for high stability of RF parameters cannot be fulfilled formany applications. This paper describes methods for RF parameterstabilization of injection-locked pulsed IMPATT oscillators during apulse width over a wide locking band used in Science Research Institute"Orion" (Kiev, Ukraine) for developing power pulsed coherent oscillatorsat an 8-mm wavelength for electronic paramagnetic resonant spectrometers
展开▼
