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SiC MOSFET switching characteristic optimization and application in battery charging/discharging

机译:SiC MOSFET开关特性的优化及其在电池充放电中的应用

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This Based on application in battery charging/discharging, instead of Si IGBT, SiC MOSFET with lower switching loss, faster switching frequency and higher operating temperature is chosen to design. In this paper, to deal with the voltage and current oscillation problem in fast switching process, the circuit model of switching on/off process is established based on a half-bridge SiC MOSFET respectively. The influence of different gate parameters on the switching characteristics is analyzed. To applicate in battery charging/discharging system, the current ripple problem has to be studied based on the optimal gate parameter. Experimental results prove the correctness of the circuit model and can provide theoretical support for SiC MOSFET’s applications in battery charging/discharging system.
机译:基于在电池充电/放电中的应用,代替Si IGBT,选择了具有更低开关损耗,更快开关频率和更高工作温度的SiC MOSFET。为了解决快速开关过程中的电压和电流振荡问题,分别基于半桥SiC MOSFET建立了开关过程的电路模型。分析了不同栅极参数对开关特性的影响。为了应用于电池充电/放电系统,必须基于最佳栅极参数研究电流纹波问题。实验结果证明了该电路模型的正确性,可为SiC MOSFET在电池充放电系统中的应用提供理论支持。

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