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Joining SiC Ceramics with Ti_3SiC_2/Ti_xC_y Multi-Interlayer by Spark Plasma Sintering

机译:通过火花等离子烧结将SiC陶瓷与Ti_3SiC_2 / Ti_xC_y多层膜结合

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Spark plasma sintering (SPS) is a promising method to obtain robust silicon carbide (SiC) joint at a relatively low temperature within a short time. In this work, the joint of SiC ceramics was prepared with TiH_2, Si and C powder mixture by SPS from 1150 to 1450 °C. The microstructure of SiC joints was observed by scanning electron microscopy (SEM). The phase composition of the interlayer was determined by X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). The mechanical properties of SiC joints were evaluated by the single lap shear test. Results showed that the microstructure and phase composition of the joints were related to the joining temperature. A dense joint could be obtained above 1250 °C. Ti_3SiC_2 and Ti_xC_y were produced in all joints. The highest shear strength of 80.5 ± 7.4 MPa was obtained in the 1350 °C joint. Also, the decomposition of Ti_3SiC_2 occurred in the 1450 °C joint and the content of Ti_xC_y increased, of which lowered the shear strength. The fracture occurred within the joining layer and SiC ceramics during shear test. Different fracture modes of the joint was observed to further clarify the relationship between shear strength and joining temperature.
机译:火花等离子体烧结(SPS)是一种有前途的方法,可以在较短的时间内在相对较低的温度下获得坚固的碳化硅(SiC)接头。在这项工作中,采用TiH_2,Si和C粉末混合物通过SPS在1150至1450°C的温度下制备SiC陶瓷接头。通过扫描电子显微镜(SEM)观察SiC接头的微观结构。中间层的相组成通过X射线衍射(XRD)和能量色散谱仪(EDS)确定。 SiC接头的机械性能通过单搭接剪切试验进行评估。结果表明,接头的微观结构和相组成与接头温度有关。高于1250°C可获得密实的接头。在所有接头中都产生了Ti_3SiC_2和Ti_xC_y。在1350°C的接合处获得了最高的80.5±7.4 MPa的剪切强度。此外,Ti_3SiC_2的分解发生在1450°C的接头中,并且Ti_xC_y的含量增加,从而降低了剪切强度。在剪切试验期间,断裂发生在连接层和SiC陶瓷内。观察到接头的不同断裂模式,以进一步阐明抗剪强度与接头温度之间的关系。

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