Cu profiles in CdTe solar cells

摘要

CdTe solar cells fabricated with varying amounts of Cu were studied by means of electrical and material characterization. Cu was incorporated in order to form a contacting layer and increase doping. The devices were exposed to elevated-temperature and light stress to induce Cu diffusion. Measurements of J-V, C-V, and QE were periodically taken of the stressed devices. The Cu depth profile was measured via SIMS. Cu concentration is correlated to performance and degradation of the devices.