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Study of the Front End Electronics Contribution to the Dead Time in He3 Proportional Counters

机译:He3比例计数器中前端电子对死区时间的贡献研究

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This paper will describe a study of the contribution of front end electronics to dead time in ~3He thermal neutron detectors. The well known source of dead time in all detectors is the duration of a pulse created by the convolution of the detector pulse with the preamplifier/shaper impulse response. Some detectors have non-uniform pulse shape and duration. In ~3He proportional counters, the duration and non-uniformity of detector pulse shapes is the dominant contributor in that convolution. Therefore the contribution of the electronics is masked and often lumped into the overall dead time analysis. For example this is the case in time interval analysis, which is a very common method for determining dead time. The contribution of the electronics, however, is not negligible. It increases the dead time by stretching the pulse further. Here we present a study of how the detector pulse properties are manifested in the more widely used front end devices in neutron detectors/coincidence counters, namely Amptek Al 11 and PDT-10 shaper/discriminators. In order to study the electronics contribution, we developed an experimental setup that allowed us to inject charge pulses with controllable amplitude and relative phase at the input of the detector electronics and thus measure pulse pair resolving time for different settings of amplitudes by the observing the discriminator output. We present DT measurement results for different modifications of Amptek Al 11 and PDT-110A shaper/discriminators at different gain settings and signal levels. The effect of shaping circuitry saturation on DT when operated with high signal level will be discussed also. Recommendations regarding optimal tube and shaper gain settings will be provided. This study also yielded evidence for non-linear shaping and saturation in Al 11 and PDT, along with double pulsing of the logic output for certain detector pulse shapes, which could also be observed in time interval analysis. Double pulsing has implications for most detector applications. Techniques to mitigate this, such as blanking, increase dead time and unrecognized pileups. They also cause non-linearity and time variance of the system. The presented data shows how dead time varies with pulse amplitude in the studied devices, and what effects and non-idealities it adds to the detector chain.
机译:本文将介绍对〜3He热中子探测器中前端电子设备对死区时间的贡献的研究。在所有检测器中,众所周知的死区时间源是由检测器脉冲与前置放大器/整形器脉冲响应的卷积产生的脉冲的持续时间。一些检测器具有不均匀的脉冲形状和持续时间。在〜3He比例计数器中,检测器脉冲形状的持续时间和不均匀性是该卷积的主要贡献者。因此,电子设备的作用被掩盖了,并且经常被归纳到整个空载时间分析中。例如,时间间隔分析就是这种情况,这是确定死区时间的一种非常常见的方法。然而,电子设备的贡献不可忽略。它通过进一步拉伸脉冲来增加死区时间。在这里,我们对中子探测器/重合计数器(Amptek Al 11和PDT-10整形器/鉴别器)中使用更广泛的前端设备中的探测器脉冲特性进行了研究。为了研究电子器件的作用,我们开发了一种实验装置,该装置允许我们在检测器电子器件的输入端注入振幅和相对相位可控的电荷脉冲,从而通过观察鉴别器来测量振幅不同设置下的脉冲对分辨时间输出。我们介绍了在不同增益设置和信号电平下对Amptek Al 11和PDT-110A整形器/鉴别器的不同修改的DT测量结果。还将讨论当以高信号电平运行时,整形电路饱和对DT的影响。将提供有关最佳管和成形器增益设置的建议。这项研究还为Al 11和PDT中的非线性整形和饱和以及某些检测器脉冲形状的逻辑输出的双脉冲提供了证据,这也可以在时间间隔分析中观察到。双脉冲对大多数检测器应用都有影响。减轻这种情况的技术,例如消隐,增加停滞时间和无法识别的堆积。它们还会引起系统的非线性和时间变化。所提供的数据显示了死区时间在所研究设备中如何随脉冲幅度变化,以及它对检测器链产生了哪些影响和非理想性。

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