Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

摘要

We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.