Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

摘要

This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm⁻² and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.