A Low Voltage Charge Pump Circuit for RFID Tag EEPROM

摘要

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in low-voltage applications like RFID tag EEPROM. The improved charge pump circuit has been used as a part of the power supply section of fully integrated radio frequency identification(RFID) transponder IC, which has been implemented in a 0.18-um CMOS process. The modified charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The measured output voltage of the enhanced four-stage charge pump circuit with each pumping capacitor of 1pF to drive the capacitive output load is around 5.62V power supply (VDD) voltage.