STABILITY OF SECONDARY RECRYSTALLIZATION IN GRAIN-ORIENTED SILICON STEEL

摘要

Secondary recrystallization stability of grain-oriented silicon steel sheets containing A1N and MnS precipitates was investigated by varying the annealing atmosphere during secondary recrystallization. Secondary recrystallization was not able to reach completion when a reduction in the inhibitor phase, prior to the completion of secondary recrystallization, allowed excessive surface grain growth to occur. An effective measure to increase secondary recrystallization stability is to reduce or eliminate excessive surface grain growth by increasing the partialpressure of N_2 during the anneal. In addition, the suitable texture components which increase the accumulation of the Goss orientation were strengthened by matrix grain growth. Therefore, in order to create stable secondary recrystallization with a sharp Goss secondary recrystallization texture, the N_2 partial pressure in the annealing atomosphere requires adjustment to deliver a suitable primary recrystallization grain structure at the sheet surface.