首页> 外文会议>International Conference on Textures of Materials;ICOTOM 15 >ELECTROCHEMICAL BEHAVIOR OF (001), (100) AND (110) Ti SINGLE CRYSTALS UNDER SIMULATED BODY FLUID CONDITION
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ELECTROCHEMICAL BEHAVIOR OF (001), (100) AND (110) Ti SINGLE CRYSTALS UNDER SIMULATED BODY FLUID CONDITION

机译:模拟体液条件下(001),(100)和(110)Ti单晶的电化学行为

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In this paper, the electrochemical behavior of Ti single crystals and CP Ti under simulated body fluid condition was investigated. (001), (100) and (110) single crystals were used for this investigation. Electrochemical Impedance Spectroscopy (EIS) was used to characterize the electrochemical behavior of the interface between the substrates and the electrolyte. Potentiodynamic polarization was also performed to characterize the corrosion resistance of the different Ti surfaces. The EIS spectra were presented in Bode plot and interpreted in terms of appropriate electrical circuits. It was found that the resistance to charge transfer, Rct, of the (001) single crystal was 5.1 MΩ cm~2 compared to 3.1 MΩ cm~2 and 3.3 MΩ cm~2 for the (100) and (110) single crystals respectively. The R_(ct) of Cp Ti was 1.1 MΩ cm~2. It should be mentioned that the resistance to charge transfer is inversely proportional to the corrosion rate. The Potentiodynamic polarization curve have also shown that the corrosion rate and passive current of (001) single crystal were lower than those of (100) and (110) single crystals. These results have shown that the (001) basal plane which is the most densely packed plane had higher corrosion resistance compared to (100) and (110) planes which have lower planar atomic densities. Also, The Cp Ti was found to have the least corrosion resistance, most probably due to the presence of grain boundaries which are areas of disorder in the material.
机译:本文研究了Ti单晶和CP Ti在模拟体液条件下的电化学行为。 (001),(100)和(110)单晶被用于该研究。电化学阻抗谱(EIS)用于表征基材和电解质之间界面的电化学行为。还进行了电位动力学极化,以表征不同Ti表面的耐腐蚀性。 EIS光谱以波特图显示,并根据适当的电路进行解释。发现(001)单晶的电荷转移电阻Rct为5.1MΩcm〜2,而(100)和(110)单晶的电荷转移电阻Rct分别为3.1MΩcm〜2和3.3MΩcm〜2。 。 Cp Ti的R_(ct)为1.1MΩcm〜2。应该提到的是,电荷转移的阻力与腐蚀速率成反比。电位动力学极化曲线还表明,(001)单晶的腐蚀速率和无源电流低于(100)和(110)单晶的腐蚀速率和无源电流。这些结果表明,与具有较低平面原子密度的(100)和(110)平面相比,作为最密集堆积的平面的(001)基础平面具有更高的耐腐蚀性。同样,发现Cp Ti具有最低的耐腐蚀性,最可能是由于存在晶界,而晶界是材料中的无序区域。

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