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Photoconduction in solid films of C_60

机译:C_60固体膜中的光电导

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摘要

Photoconduction in solid films of C_60 has been investigated as a function of applied field, excitation wavelength and light intensity. Exposure of the films to ultraviolet and visible light (200-800 nm), and externally applied voltage produced photocurrent in the range 10~(-11)-10~(-6)A/cm~2; the magnitude depended on the polarity of the illuminated electrode. This asymmetry is a function of electric field and light penetratin depth. It is attributed to a combined effect of varying excitonic electron injection from the Al cathode and a differnece in mobility of holes and electrons. Spectral features of the photocurrent vary from sample to sample, but a notable number of recurrent bands can be distinguished, in addition to principal features such as their antibatic behaviour with the absorption spectrum and higher photogeneration yield in the long-wavelength part of the spectra above 400 nm. This behviour can be explained by a vast range of orbitally and spin forbidden electron transitions identified in high-resolution absorption spectra of C_60. Correspondingly, a complex relationship between photocurrent and light intensity is observed.
机译:已经研究了C_60固体膜中的光电导与施加场,激发波长和光强度的关系。将该膜暴露于紫外和可见光(200-800nm)下,并且外加电压产生的光电流为10〜(-11)-10〜(-6)A / cm〜2;大小取决于照明电极的极性。这种不对称性是电场和光穿透蛋白深度的函数。这归因于来自铝阴极的变化的激子电子注入以及空穴和电子迁移率的差异的综合作用。光电流的光谱特征随样品的不同而变化,但是除了主要特征(例如其与吸收光谱的抗蝙蝠行为以及在上述光谱的长波长部分中具有较高的光生产率)外,还可以区分出显着数量的复现带。 400纳米可以通过在C_60的高分辨率吸收光谱中确定的范围广泛的轨道和自旋禁止电子跃迁来解释这种行为。相应地,观察到光电流和光强度之间的复杂关系。

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