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Field-induced metal diffusion into C_60 thin films

机译:场致金属扩散到C_60薄膜中

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摘要

We report the evolution in time of d.c. conductivity of polycrystalline thin films of C_60 at different temperatures and under various applied voltages. All films show a clear semiconducting behaviour. The initial resistivity (at T=14- deg C) and the activation energy are rho approx 10~5 omega cm and E_a approx 0.5 eV, respectively. For various types of metallic electrodes M (M-Au, Ag or In), a field-induced conductivity increase by several orders of magnitude and an activation energy decrease are observed. The results are interpreted in terms of electrode metal diffusion into the film.
机译:我们报告了dc时间的演变。 C_60多晶薄膜在不同温度和不同施加电压下的电导率。所有电影都表现出明显的半导体行为。初始电阻率(在T = 14-℃时)和活化能分别为rho约10〜5Ωcm和E_a约0.5 eV。对于各种类型的金属电极M(M-Au,Ag或In),可以观察到场致电导率增加几个数量级,并且激活能降低。根据电极金属扩散到薄膜中来解释结果。

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