Electrial nad luminescent properties of double-layer oligomeric/polymeric light-emitting diodes

机译：双层低聚物/聚合物发光二极管的电和发光特性

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We report the use of alpha-sexithiophene (T6) thin films sublimed onto glass substrates coated with indium-tin oxide in light-emitting diodes. Absolute photoluminescence quantum efficiencies were found to be in the range 10~(-2)-10~(-3)

机译：我们报告了在发光二极管中使用升华到涂有铟锡氧化物的玻璃基板上的alpha-sethio噻吩（T6）薄膜的用途。发现绝对光致发光量子效率在10〜（-2）-10〜（-3）范围内

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《Symposium M on new prospects on electronic properties of organic materials;Symposium K on fullerenes: From new molecules to new materials》|1996年|p.145-148|共4页
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F.Cacialli; R.N.Marks; R.H.Friend; R.Zamboni; C.Taliani; S.C.Moratti; A.B.Holmes;
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中图分类一般工业技术;
关键词
electrical properties; luminescence; diodes; sexithiophene; barriers; poly(p-phenylenevinylene);

机译：电性能;发光二极管;六噻吩障碍聚对苯撑亚乙烯基;

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Electrial nad luminescent properties of double-layer oligomeric/polymeric light-emitting diodes

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