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Charge transport in ultrathin Langmuir-Blodgett film devices: HOMO-mediated tunneling?

机译:超薄Langmuir-Blodgett胶片设备中的电荷传输:HOMO介导的隧穿?

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Symmetrically contacted sandwich junctions incorporating very thin Langmuir-Blodgett films of perylenetetracarboxyldiimide and octa-substituted phthalocyanine derivatives have been prepared. At 4.2 K current/voltage curves display abrupt current increases at reproducible voltage thresholds. To estimate the ionization potential of these pi-systems, cyclic voltammetry studies were conducted on the molecules in a nonpolar solvent. The ionization potential of the phthalocyanine compound is directly accessible through its oxidation potential. In the case of the perylenetetracarboxyldiimide derivatives, the ionization potential is approximated by using the electron affinity (obtained from the reduction potential) and the 'HOMO-LUMO' gap from absorption spectra. The obtained values are close to the measured voltage thresholds and emphasize the picture of HOMO-mediated tunneling processes.
机译:已经制备了对称接触的三明治结,该三明治结结合了非常薄的carboxy四羧基二酰亚胺和八取代的酞菁衍生物的Langmuir-Blodgett膜。在4.2 K时,电流/电压曲线显示在可重复的电压阈值处突然电流增加。为了估计这些pi系统的电离势,在非极性溶剂中对分子进行了循环伏安法研究。酞菁化合物的电离电势可通过其氧化电势直接获得。在the四羧基二酰亚胺衍生物的情况下,通过使用电子亲和力(从还原电势获得)和吸收光谱中的“ HOMO-LUMO”能级来近似电离势。所获得的值接近于测得的电压阈值,并强调了HOMO介导的隧穿过程的情况。

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