Electronic structures of laterally coupled self-assembled quantum dot structures

摘要

We investigate spatial overlap of electron wave functions in three laterally coupled self-assembled quantum structures using valence force field method and eight-band k·p method. Strain profile, piezoelectric potential, band edge energy, electron and hole distributions and optical transition strength for interband transition are calculated. Bonding state, anti-bonding state, mixing of ground and excited states and the changes in selection rules are obtained by numerical simulation.