Abstract: The development of a large-area amorphous silicon array for x-ray imaging is described. The array comprises pixels made up of amorphous silicon transistors and photodiode sensors with a pixel-to-pixel pitch of 450 $mu@m. With a format of 512 $MUL 560 pixels, the array has an area of 23 by 25 cm$+2$/ making it the largest self-scanning, solid-state, pixelated imaging device ever reported. The first diagnostic x-ray images from such a large area device are demonstrated and a general review of the current state of this technology is given. The properties of such arrays are summarized and future anticipated developments discussed.!26
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机译：摘要：描述了用于X射线成像的大面积非晶硅阵列的开发。该阵列包括由非晶硅晶体管和光电二极管传感器组成的像素，像素间距为450μm。该阵列具有512 $ MUL 560像素的格式，面积为23 x 25 cm $ + 2 $ /，是有史以来最大的自扫描固态像素化成像设备。展示了来自这种大面积设备的第一张诊断X射线图像，并对该技术的当前状态进行了概述。总结了此类阵列的特性，并讨论了未来的预期发展！26
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