High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

机译：采用标准的商用GaAs VLSI工艺制造的高速0.9μm横向p-i-n光电探测器

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Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.

机译：提出了采用未经修改的商用GaAs VLSI工艺制造的横向检测器。检测器展现出先前观察到的特性灵敏度和电容特性。高速测量表明带宽超过4 GHz。

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《IEEE Lester Eastman Conference on High Performance Devices; 20040804-06; Rensselaer Polytechnic Institute》|2004年|P.90-95|共6页
会议地点 Rensselaer Polytechnic Institute
作者
WOJCIECH P. GIZIEWICZ; CLIFTON G. FONSTAD Jr; SHEILA PRASAD;
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Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, USA;

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正文语种 eng
中图分类半导体技术;
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1. High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process [J] . Wojciech P. Giziewicz, Clifton G. Fonstad Jr., Sheila Prasad International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第3期

机译：采用标准的商用GaAs VLSI工艺制造的高速0.9μm横向p-i-n光电探测器
2. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays [J] . Craig A.P., Marshall A.R.J., Tian Z.-B., Applied Physics Letters . 2013,第25期

机译：具有Al0.9Ga0.2As0.1Sb0.9势垒层的基于中红外InAs0.79Sb0.21的nBn光电探测器，以及与InAs0.87Sb0.13 p-i-n二极管的比较，二者均使用界面失配阵列在GaAs上生长
3. Mid-infrared InAs_(0.79)Sb_(0.21) -based nBn photodetectors with Al_(0.9)Ga_(0.2)As_(0.1)Sb_(0.9) barrier layers, and comparisons with InAs_(0.87)Sb_(0.13) p-i-n diodes, both grown on GaAs using interfacial misfit arrays [J] . A. P. Craig, A. R. J. Marshall, Z.-B. Tian, Applied Physics Letters . 2013,第25期

机译：具有Al_（0.9）Ga_（0.2）As_（0.1）Sb_（0.9）势垒层的中红外InAs_（0.79）Sb_（0.21）基nBn光电探测器，以及与InAs_（0.87）Sb_（0.13）引脚二极管的比较使用界面失配阵列在GaAs上生长
4. High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process [C] . WOJCIECH P. GIZIEWICZ, CLIFTON G. FONSTAD Jr, SHEILA PRASAD, IEEE Lester Eastman Conference on High Performance Devices . 2005

机译：高速0.9μm横向P-I-N光电探测器，在标准商业GaAs VLSI过程中制造
5. Design, analysis, and macroscopic modeling of high speed photodetectors emphasizing the joint opening effect avalanche photodiode and the lateral p-i-n photodiode. [D] . Haralson, Joe Nathan, II. 1999

机译：高速光电探测器的设计，分析和宏观建模，强调了联合打开效应雪崩光电二极管和横向p-i-n光电二极管。
6. A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer Photodetectors [O] . Jian Ye, Xueliang Li, Jianjun Zhao, 2015

机译：一种制造高性能溶液处理的n-MoS2 / p-MoS2双层光电探测器的简便方法
7. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays [O] . Craig Adam, Marshall Andrew, Tian Z.-B., 2013

机译：具有Al0.9Ga0.2As0.1Sb0.9势垒层的基于中红外InAs0.79Sb0.21的nBn光电探测器，以及与InAs0.87Sb0.13 p-i-n二极管的比较，两者均使用界面失配阵列在GaAs上生长
8. Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, TEM (Transmission Electron Microscope) Study and GaAs p-I-N Photodetector on Si [R] . Lo, Y. H. , Charasse, M. N. , Lee, H. , 1987

机译：沿si上的斜面蚀刻Gaas的拉曼散射光谱，TEm（透射电子显微镜）研究和si上的Gaas p-I-N光电探测器

High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

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