ATOMICALLY FLAT Ⅲ-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY

摘要

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based Ⅲ-Ⅴ compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5 § ←5 m.