TEMPERATURE DEPENDENT Ⅰ-Ⅴ CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS

摘要

DC Ⅰ-Ⅴ characteristics of AlGaN/GaN heterojunction bipolar transistors (HBTs) and GaN homojunction bipolar transistors (BJTs) are analyzed in the temperature range of 200-450 K. At low current levels, the adverse effects of poor ohmic contacts coupled with paths of high leakage make it difficult to extract intrinsic device operation ["Explanation of anomalous current gain observed in GaN based bipolar transistors", Xing et al. IEEE Elect. Dev. Lett. 24(1) 2003:p.4-6]. At intermediate current levels, owing to enhanced ionization of Mg in the base, the HBTs show an increase in current gain resulting from mitigated current crowding, and the BJTs show a decrease in current gain resulting from reduction of emitter injection coefficient. The offset voltage dependence on temperature is also explained.