Enhancement of Light Extraction of GaN Light-Emitting Diode by Photonic Crystal Slab

摘要

The Light-emitting diodes based on Hi-nitride wide band gap semiconductors, which have a photonic crystal slab consisting of a graphite lattice of pillars on the cladding layer, is constructed. The vertical z direction optical output energy of the Light-emitting diodes is calculated by three-dimensional finite-difference time-domain method. The results show that the two-dimensional graphite-arranged pillars with a thick pillar in the middle can be utilized to enhance the light extraction. The tower-like pillars, which are thin on the top of the pillars and thick in the root of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper. The optical output energy varies randomly with the change of PC columns in size and site in some extents randomly, but does not change very much.