Dependence of lattice parameter of melt-grown ZnSe on zn partial pressure during in situ annealing

摘要

Lattice parameters of annealed ZnSe crystals have been measured by the Bond method. The annealing was carried out at 1000 deg C under a definite Zn partial pressure maintained by heating a Zn reservoir after growth from the melt under Zn partial pressure. The lattice parameter, a, depends on the Zn reservoir temperature during annealing, T_Zn(A); a = 0.566898 +- 0.000005 nm at T_Zn(A) of 450-600 deg C, a = 0.566910 +- 0.000005 nm at T_Zn(A) of 750 deg C and a = 0.566913 +- 0.000003 nm at T_Zn(A) of 900 deg C. The dependence of lattice parameter on Zn partial pressure is discussed. direct c 1999 Elsevier Science B.V. All rights reserved.