Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method

摘要

Diffusion length of minority carriers was determined in not intentionally doped Cd_0.93Zn_0.07Te and Hg_0.8Cd_0.2Te single crystals by the EBIC method at temperatures 80-300 K using an evaporated Au Schottky barrier ((CdZn)Te) or a P-N junction produced by ion milling or plasma etching ((HgCd)Te). The L values in P-(CdZn)Te) or a P-N junction produced by ion milling or plasma etching ((HgCd)Te). The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurement with photoluminescence for the (CdZn)Te was observed. direct c 1999 Elsevier Science B.V. All rights reserved.