High-temperature (673-1173 K) electrical property (#sigma#, R_H) measurements in undoped and In-doped (up to 1 X 10~20 at/cm~3) CdTe were performed under different stoichiometric conditions. Cadmium (tellurium) vapor pressure or temperature electron (hole) density dependences were obtained. The results are described by a computed defect structure model, which optimizes the defect reaction constants. A new In incorporation defect reaction is proposed, explaining the dopant self-compensation mechanism. direct c 1999 Elsevier Science B.V. All rights reserved.
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机译：在不同化学计量条件下，对未掺杂和In掺杂（最高1 X 10〜20 at / cm〜3）CdTe进行高温（673-1173 K）电性能（＃sigma＃，R_H）测量。获得了镉（碲）蒸气压或温度电子（空穴）密度依赖性。结果由计算的缺陷结构模型描述，该模型优化了缺陷反应常数。提出了新的In掺入缺陷反应，解释了掺杂剂的自补偿机理。直接c 1999 Elsevier Science B.V.保留所有权利。
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