Vapor pressure scanning implications of CdTe crystal growth

摘要

Vapor pressure scanning (VPS) is a direct high precision method of investigation of the composition of non-stoichiometric crystals at high temperatures. It is based on experimental measurements of the vapor pressure, from which three-dimensional P-T-X (pressure-temperature-composition) range of existence of the crystalline phase is constructed. For CdTe the accuracy of the VPS determination of nonstoichiometry was proved to be within 10~-4 at