Low resistive ZnSe substrates

摘要

Doping by annealing of ZnSe single crystals grown by solid phase recrystallisation in a mixture of Al and Zn at 860 deg C has been studied. The properties of doped ZnSe crystals assessed by secondary ions mass spectroscopy, scanning electron microscopy (electron channelling patterns (ECP) and cathodoluminescence (CL)), double crystal X-ray diffraction (rocking curve) and Hall effect measurements depend strongly on the geometry of the crystal which is annealed. In the best case, CL spectra show only the donor-bound exciton line (2.67 eV at 300 K; 2.77 eV at 100 K) indicating thus, together with ECP and rocking curve FWHM (35 arcsec), the high crystalline quality of the(1 0 0)-doped substrates. From Hall effect measurements, a free electron cncentration of 5 X 10~17 cm~-3 and an electron mobility of 200 cm~2V~-1s~-1(resistivity 6.3 X 1-~-2 #OMEGA# cm) at 300 K are determined. direct c 1999 Elsevier Science B.V. All rights reserved.