Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors

摘要

This paper addresses scaling issues in graphene nanoribbon transistors (GNRFETs) by using a two-dimensional (2-D) Poisson and drift-diffusion solver with finite element method (FEM). GNRFETs with the back gate control and the channel width down to less than 5nm have been reported to have I_(on)/I_(off) ratio up to 10~6. Our simulations show an agreement with the published experimental work and show a potential to reach unit current gain cut-off frequency, f_T, up to more than JTHz with a satisfying I_(on)/I_(off) ratio at the same time. This makes GNRFETs attractive for high speed logic.