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Structural and magnetic properties on F-doped LiVO_2 with two-dimensional triangular lattice

机译:具有二维三角晶格的F掺杂LiVO_2的结构和磁性

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摘要

The layered oxide LiVO_2 recently has received more attention due to its interesting structural and magnetic behaviors involving the two-dimensional magnetic frustration in these systems. We synthesized a series of F-doped LiVO_2 samples, and reported the F-doping effect on the structure and transition temperature T,. The samples LiVO_(2-x)F_x (x=0, 0.1, 0.2 and 0.3) were characterized by X-ray diffraction, scanning electron microscope (SEM), differential scanning calorimetry (DSC), magnetic susceptibility and specific heat measurement. The structural analysis shows that with increasing x, the ratio of lattice parameter c/a increasing, i.e. in the a-b plane the lattice is compressed while in the c-axis direction the lattice expands. The DSC measurements show that a first-order phase transition happens at around 500 K, and the thermal hysteresis around phase transition temperature T, increases with increasing x. Substitution of O with F ions results in a change of two dimensional characteristics and the distortion of the VO_6, block in structure, which significantly influence the magnetic ordering transition temperature T_t.
机译:层状氧化物LiVO_2最近由于其有趣的结构和磁行为而受到关注,这些行为涉及这些系统中的二维磁化失稳。我们合成了一系列F掺杂的LiVO_2样品,并报道了F掺杂对结构和转变温度T1的影响。通过X射线衍射,扫描电子显微镜(SEM),差示扫描量热法(DSC),磁化率和比热测量对样品LiVO_(2-x)F_x(x = 0、0.1、0.2和0.3)进行了表征。结构分析表明,随着x的增加,晶格参数c / a的比率增加,即在a-b平面中晶格被压缩,而在c轴方向上晶格膨胀。 DSC测量表明,一阶相变发生在500 K左右,并且相变温度T附近的热滞随x的增加而增加。用F离子取代O会导致二维特性发生变化,并且结构中的VO_6块变形,这会严重影响磁有序转变温度T_t。

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  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者单位

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.,Department of physics, University of Science and Technology Beijing, Beijing 100083, China;

    Department of physics, University of Science and Technology Beijing, Beijing 100083, China;

    Department of physics, University of Science and Technology Beijing, Beijing 100083, China;

    School of Material Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez, PR 00681-9044, U.S.A.;

    Department of physics, University of Science and Technology Beijing, Beijing 100083, China;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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