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Pseudo-Superlattices of Bi_2Te_3 Topological Insulator Films with Enhanced Thermoelectric Performance

机译:具有增强的热电性能的Bi_2Te_3拓扑绝缘膜的伪超晶格

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摘要

It was recently suggested theoretically that atomically thin films of Bi_2Te_3 topological insulators have strongly enhanced thermoelectric figure of merit. We used the "graphene-like" exfoliation process to obtain Bi_2Te_3 thin films. The films were stacked and subjected to thermal treatment to fabricate pseudo-superlattices of single crystal Bi_2Te_3 films. Thermal conductivity of these structures was measured by the "hot disk" and "laser flash" techniques. The room temperature in-plane and cross-plane thermal conductivity of the stacks decreased by a factor of~2.4 and 3.5 respectively as compared to that of bulk. The strong decrease of thermal conductivity with preserved electrical properties translates to ~140-250% increase in the thermoelectric figure if merit. It is expected that the film thinning to few-quintuples, and tuning of the Fermi level can lead to the topological insulator surface transport regime with the theoretically predicted extraordinary thermoelectric efficiency.
机译:最近,从理论上讲,Bi_2Te_3拓扑绝缘子的原子薄膜已大大增强了热电性能。我们使用“类石墨烯”剥离工艺获得Bi_2Te_3薄膜。将膜堆叠并进行热处理以制造单晶Bi_2Te_3膜的伪超晶格。这些结构的热导率通过“热盘”和“激光闪光”技术测量。与堆相比,堆的室温平面内和横断面热导率分别降低了约2.4和3.5倍。如果保持良好的导电性能,则导热系数的强烈降低转化为热电系数的〜140-250%的增加。可以预期,薄膜变薄到几个五倍,费米能级的调整会导致拓扑绝缘子表面的传输方式具有理论上预测的非凡的热电效率。

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  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者单位

    Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521 USA;

    Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521 USA;

    Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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