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Synthesis of Graphene-CNT Hybrid Nanostructures

机译:石墨烯-CNT杂化纳米结构的合成

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摘要

Using chemical vapor deposition technique, a novel 3D carbon nano-architecture called a pillared graphene nanostructure (PGN) is in situ synthesized. The fabricated novel carbon nanostructure consists of CNT pillars of variable length grown vertically from large-area graphene planes. The formation of CNTs and graphene occurs simultaneously in one CVD growth treatment. The detailed characterization of synthesized pillared graphene shows the cohesive structure and seamless contact between graphene and CNTs in the hybrid structure. The synthesized graphene-CNT hybrid has a tunable architecture and attractive material properties, as it is solely built from sp~2 hybridized carbon atoms in form of graphene and CNT. Our methodology provides a pathway for fabricating novel 3D nanostructures which are envisioned for applications in hydrogen storage, nanoelectronics, and supercapacitors.
机译:使用化学气相沉积技术,原位合成了一种新型的3D碳纳米结构,称为柱状石墨烯纳米结构(PGN)。所制造的新型碳纳米结构由从大面积石墨烯平面垂直生长的可变长度的CNT柱组成。在一种CVD生长处理中,CNT和石墨烯的形成同时发生。合成的带柱石墨烯的详细表征显示了杂化结构中的内聚结构和石墨烯与CNT之间的无缝接触。合成的石墨烯-CNT杂化物具有可调谐的结构和有吸引力的材料特性,因为它仅由sp〜2杂化的碳原子以石墨烯和CNT的形式构建。我们的方法论为制造新颖的3D纳米结构提供了一条途径,这些构想可用于氢存储,纳米电子学和超级电容器中。

著录项

  • 来源
  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者单位

    Department of Mechanical Engineering, University of California, Riverside, CA 92521, U.S.A.,Department of Electrical Engineering, University of California, Riverside, CA 92521, U.S.A.;

    Department of Chemistry, University of California, Riverside, CA 92521, U.S.A.;

    Department of Mechanical Engineering, University of California, Riverside, CA 92521, U.S.A.;

    Materials Science and Engineering Program, University of California, Riverside, CA 92521, U.S.A.;

    Department of Electrical Engineering, University of California, Riverside, CA 92521, U.S.A.;

    Department of Electrical Engineering, University of California, Riverside, CA 92521, U.S.A.;

    Department of Mechanical Engineering, University of California, Riverside, CA 92521, U.S.A.;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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