Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
Department of Electronic Electrical Engineering, University of Sheffield, George Porter Building, Wheeldon Street, Sheffield, S3 7HQ, UK;
avalanche photodiodes; gas sensing; InAs; LIDAR; mesa; photodiodes; planar;
机译:基于GaSb的Ⅱ型InAs / GaSb超晶格光电二极管的生长和表征
机译:基于GaSb的Ⅱ型InAs / GaSb超晶格光电二极管的生长和表征
机译:中红外INAS / GASB超晶格平面光电二极管,由金属 - 有机化学气相沉积制造
机译:高灵敏度Inas光电二极管用于中红外检测
机译:基于中红外线INA的光电探测器:处理和结构对暗电流的影响
机译:使用硅雪崩光电二极管从InAs / GaAs量子点发射1.3μm的单光子特性
机译:用于中红外探测的高灵敏度Inas光电二极管
机译:金属有机化学气相沉积法生长Inassb / Inas / Inpsb / Inas中红外发射体