首页> 外文会议>Conference on novel in-plane semiconductor lasers VIII; 20090126-29; San Jose, CA(US) >Recent Progress in Interband Cascade Lasers With Separate Confinement Layers
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Recent Progress in Interband Cascade Lasers With Separate Confinement Layers

机译:带隔离层的带间级联激光器的最新进展

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Interband cascade lasers are efficient and compact semiconductor mid-infrared (3-6 μm) light sources with low-power consumptions. We report our recent progress in the development of interband cascade lasers with separate confinement layers. Broad-area (0.1mm×1mm) lasers have been operated in cw mode at temperatures up to 213K near 3.36 μm. For narrow ridge-waveguide (0.01mm×1.5mm) lasers, cw operation has been achieved at temperatures up to 266K near 3.43 μm, 260K near 3.7 μm, and 238K near 4.04 μm. The results on both broad-area and narrow-ridge IC lasers are discussed in comparison with previous regular IC lasers without separate confinement layers.
机译:带间级联激光器是高效且紧凑的半导体中红外(3-6μm)光源,具有低功耗。我们报告了带隔离层的带间级联激光器的最新进展。广域(0.1mm×1mm)激光器已在cw模式下以高达213K的温度在3.36μm附近工作。对于窄脊波导(0.01mm×1.5mm)激光器,在3.43μm附近可达266K,在3.7μm附近可达260K,在4.04μm附近可达238K的温度下实现了连续工作。与以前的没有单独限制层的常规IC激光器相比,讨论了在宽区域和窄脊IC激光器上的结果。

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