Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, US;
III-Nitride; InGaN QWs; diode lasers; staggered InGaN QWs;
机译:500–540 nm交错式InGaN量子阱发光二极管的设计分析
机译:高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
机译:采用渐变的生长温度曲线在520-525 nm处发射交错的InGaN量子阱发光二极管
机译:交错的Ingan量子阱二极管激光器在500nm处发出
机译:GaN / InGaN发光二极管中量子阱结构的建模和分析。
机译:自组装InGaN量子点的宽带全色单片InGaN发光二极管
机译:红光发光二极管与激光器IngaN-Delta-Inn量子井Ingan-Delta-Inn量子孔
机译:交错InGaN量子阱发光二极管提高辐射效率。