首页> 外文会议>Conference on novel in-plane semiconductor lasers VIII; 20090126-29; San Jose, CA(US) >Ultra-Fine Pitch Individually Addressable Visible Laser Arrays for High Speed Digital Printing Applications
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Ultra-Fine Pitch Individually Addressable Visible Laser Arrays for High Speed Digital Printing Applications

机译:适用于高速数字印刷应用的超细间距可单独寻址的可见激光阵列

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An individually addressable visible semiconductor laser diode array with a 20 μm pitch is demonstrated that is highly suited for deployment in next-generation digital print systems. The array, operating at 660 nm, comprises 22 single mode lasers fabricated on a single GaInP/AlGaInP/GaAs substrate. The laser array is flip-chip bonded onto a patterned ceramic submount that enables the individual elements to be driven independently and is integrated into a 26-pin butterfly package. Arrays tested CW exhibit low threshold current (<20 mA per emitter), up to 50 mW output power per channel with a high slope efficiency (0.9 W/A) and a high characteristic temperature of over 100 K.
机译:演示了间距为20μm的可单独寻址的可见半导体激光二极管阵列,非常适合在下一代数字打印系统中进行部署。该阵列工作于660 nm,包括在单个GaInP / AlGaInP / GaAs衬底上制造的22个单模激光器。激光阵列倒装芯片连接到图案化的陶瓷底座上,该底座可独立驱动单个元件,并集成到26针蝶形封装中。经过测试的CW阵列具有低阈值电流(每个发射器<20 mA),每个通道高达50 mW的输出功率,高斜率效率(0.9 W / A)和100 K以上的高特征温度。

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