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Yield Implications of Wafer Edge Engineering

机译:晶圆边缘工程的产量意义

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摘要

Many uncharacterized phenomena occur at the edge of the wafer. Interactions between film stresses, tool clamp rings, lithography edge exclusions, etch non-uniformities, and CMP non-uniformities are some of the factors that influence the properties of the film stack close to the edge of the wafer. This paper discusses and provides examples of factors that should be considered when characterizing the film stack at the edge of the wafer. Tool interactions, edge exclusions, process non-uniformities, and other process variations are presented in this context. A relevant edge-engineering problem is then presented, where a delaminating film at the edge of the wafer contaminated the interior of the wafer. The solution to this problem involved a thorough characterization and redesign of the wafer edge film stacks. The discussion, analysis, and solution of this problem encompass and demonstrate the concepts reviewed in the paper.
机译:许多未表征的现象发生在晶圆的边缘。膜应力,工具夹环,光刻边缘排除,蚀刻不均匀和CMP不均匀之间的相互作用是一些影响靠近晶片边缘的膜叠层特性的因素。本文讨论并提供了在表征晶片边缘的薄膜叠层时应考虑的因素的示例。在此上下文中介绍了工具交互作用,边缘排除,过程不均匀性和其他过程变化。然后提出了一个相关的边缘工程问题,其中晶片边缘的分层膜污染了晶片的内部。解决该问题的方法包括彻底表征和重新设计晶圆边缘薄膜叠层。对这个问题的讨论,分析和解决方案涵盖并演示了本文中回顾的概念。

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