首页> 外文会议>Conference on Microelectronic Yield, Reliability, and Advanced Packaging, Nov 28-30, 2000, Singapore >Resistance Degradation in Early Stage of Electromigration of Al(Cu) Metal lines
【24h】

Resistance Degradation in Early Stage of Electromigration of Al(Cu) Metal lines

机译:Al(Cu)金属线电迁移早期的电阻衰减

获取原文
获取原文并翻译 | 示例

摘要

Resistance degradation in the early stage of electromigration of Al(Cu) metal lines has been investigated by using high resolution resistance measurement. The resistance variation due to Cu diffusion along the line was separated from that due to the thermal stress in the electromigration test. It was found that Cu diffusion along the line strongly depends on the metal line structure. In a wide line with polycrystalline structure, the resistance drop due to Cu diffusion is linearly increased with the test time. However, as the linewidth is reduced and the line becomes bamboo structure, most of resistance drop is ascribed to the thermal stress and Cu diffusion along the line is almost negligible. This finding indicates that the role of Cu in the electromigration reliability strongly depends on the line structure, and previous theory on the role of Cu in improvement of electromigraiton reliability can not simply apply to the metal line with bamboo structure.
机译:已通过高分辨率电阻测量研究了Al(Cu)金属线电迁移早期的电阻退化。在电迁移试验中,将由于Cu沿着线的扩散引起的电阻变化与由于热应力引起的电阻变化分开。发现沿线的Cu扩散强烈地取决于金属线结构。在具有多晶结构的宽线中,由于Cu扩散引起的电阻降随测试时间线性增加。然而,随着线宽减小并且线变为竹结构,大部分电阻下降归因于热应力,并且沿线的Cu扩散几乎可以忽略。该发现表明,Cu在电迁移可靠性中的作用很大程度上取决于线结构,并且先前关于Cu在提高电迁移可靠性中的作用的理论不能简单地应用于具有竹结构的金属线。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号