A Comprehensive Study of Indium-Implantation Induced Damages in 0.25 μm MOSFET's

摘要

In this paper, an investigation of the DC characteristics of 0.25 μm indium-implanted MOSFET's concerning on indium implantation induced damages is presented. The experimental data indicates that the devices with indium-implanted channel tend to show increases in device leakage current, which could be attributed the indium implantation induced damages. The impact of the Indium implantation on the degradation of device performance was investigated through detailed studies of device I-V characteristics, and the measurement results are found to correlate well with the variations in the process conditions. Our findings indicate that the elimination of the implantation-induced damages by post implantation annealing is particularly important for deep sub-micron MOSFET's using indium implantation.